An integrated optoelectronic high frequency modulator on silicon

摘要

The invention concerns an optoelectronic component designed to control an optical signal comprising a wave microguide ridged in a silicon-on-insulator (SOI) type substrate and an active zone characterized in that said active zone consists of a plurality of very thin silicon layers either type N+ doped or type P+ doped (δ-doping), said zone being arranged between a N+doped zone and a P+doped zone forming an PIN diode, connected to two electrodes arranged on either side of said active zone enabling the structure to be polarized. The invention also concerns a method for making an optoelectronic component. The invention further concerns the use of an optoelectronic component to produce an optoelectronic switch, as well as the use of an optoelectronic component to produce an optoelectronic modulator.