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METHOD OF INTEGRATED TEST OF SEMICONDUCTOR AND SEMICONDUCTOR TESTING DEVICE

机译:半导体与半导体测试装置的综合测试方法

摘要

PROBLEM TO BE SOLVED: To integrate thermal resistance, surge, switching characteristic, and continuous operation tests of power semiconductor elements, and to perform the tests by the same testing device.;SOLUTION: A power supply section 1 supplies power to a DUT connection section 4 to which a DUT (a device to be tested) 3 is connected via a load section 2. The load section 2 uses induction loads, resistance loads, capacitance loads, passive loads of rectifying components, or the like, and switching devices (active loads) of transistors, or the like to impart required operating duty to each DUT 3. A DUT control-drive section 6 and a DUT characteristic measurement section 7 are connected to the DUT connection section 4. The DUT control-drive section 6 supplies prescribed voltage signals, current signals, or frequency signals to the DUT 3 to drive the DUT. The DUT characteristic measurement section 7 measures the electric and thermal characteristics by the values of current or voltage flowing in the DUT 3.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:集成功率半导体元件的热阻,浪涌,开关特性和连续运行测试,并通过同一测试设备执行测试;解决方案:电源部分1为DUT连接部分供电在图4中,DUT(待测设备)3通过负载部分2连接到该负载部分。负载部分2使用感应负载,电阻负载,电容负载,整流组件的无源负载等,以及开关设备(有源负载等),以将所需的工作负荷赋予每个DUT3。DUT控制驱动部分6和DUT特性测量部分7连接到DUT连接部分4。DUT控制驱动部分6提供预定的电源。电压信号,电流信号或频率信号发送给DUT 3以驱动DUT。 DUT特性测量部分7通过在DUT 3中流动的电流或电压的值来测量电气和热特性。COPYRIGHT:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2010107432A

    专利类型

  • 公开/公告日2010-05-13

    原文格式PDF

  • 申请/专利权人 FUJI ELECTRIC SYSTEMS CO LTD;

    申请/专利号JP20080281416

  • 发明设计人 YOSHIDA ATSUSHI;

    申请日2008-10-31

  • 分类号G01R31/26;

  • 国家 JP

  • 入库时间 2022-08-21 19:06:15

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