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MEMORY CONTROLLER AND METHOD OF ADJUSTING CONTROL SIGNAL OUTPUT TIMING OF THE SAME
MEMORY CONTROLLER AND METHOD OF ADJUSTING CONTROL SIGNAL OUTPUT TIMING OF THE SAME
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机译:存储器控制器和调整其相同的控制信号输出时序的方法
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摘要
PROBLEM TO BE SOLVED: To easily recognize relation between a memory control signal and a clock and to enlarge a margin to the setup hold of the memory control signal and the clock.;SOLUTION: A memory controller for writing data to a semiconductor memory device is provided with: a phase adjustment circuit for delaying a control signal for controlling the semiconductor memory device and outputting it to the semiconductor memory device; and a data strobe monitoring circuit for monitoring a data strobe signal inputted from the semiconductor memory device in response to the control signal and outputting a response signal corresponding to the response time from the output of the control signal to the input of the data strobe signal. The delay amount of the phase adjustment circuit is set to a value shifted to the front or back of the delay amount with which the timing of outputting the response signal is changed when the control signal is outputted to the semiconductor memory device while successively increasing the delay amount and the timing of outputting the response signal is monitored.;COPYRIGHT: (C)2010,JPO&INPIT
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