METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE BY MEANS OF DOUBLE PATTERNING PROCESS UTILIZING ACID DIFFUSION

摘要

PROBLEM TO BE SOLVED: To provide a method for forming fine patterns of a semiconductor device by means of a double patterning process utilizing acid diffusion.;SOLUTION: The method comprises steps of: forming a plurality of first mask patterns on a substrate separated from one another; forming a capping layer containing an acid source on the side face and the upper face of each of the first mask patterns; diffusing an acid originated from the acid source in the capping layer from the capping layer into a second mask layer to form an acid diffusion area in the second mask layer; and removing the acid diffusion layer of the second mask layer to form a plurality second mask patterns each constituted of the remaining part of the second mask layer.;COPYRIGHT: (C)2010,JPO&INPIT