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THIN-FILM TRANSISTOR, ACTIVE MATRIX TYPE THIN-FILM TRANSISTOR ARRAY AND ACTIVE MATRIX DRIVE DISPLAY

机译:薄膜晶体管,有源矩阵类型薄膜晶体管阵列和有源矩阵驱动器显示

摘要

PPROBLEM TO BE SOLVED: To provide a thin-film transistor with a large on-state current by an inexpensive printing process. PSOLUTION: The thin-film transistor 1 is constituted of an insulating substrate 2, a gate electrode 3, a gate insulating film 4, a semiconductor layer 5 of a lower layer, a source electrode 6, a drain electrode 7 and an upper layer semiconductor layer 8. The semiconductor layer is constituted of two layers as an especially characteristic structure so that the lower layer composed of the semiconductor layer 5, the source electrode 6 and the drain electrode 7, and the upper layer of the semiconductor layer 8 are laminated sequentially. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:通过廉价的印刷工艺提供具有大导通电流的薄膜晶体管。

解决方案:薄膜晶体管1由绝缘基板2,栅电极3,栅绝缘膜4,下层的半导体层5,源电极6,漏电极7和衬底构成。上层半导体层8。半导体层由两层构成,作为特别的特征结构,使得下层由半导体层5,源电极6和漏电极7以及半导体层8的上层构成。依次层压。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010067767A

    专利类型

  • 公开/公告日2010-03-25

    原文格式PDF

  • 申请/专利权人 RICOH CO LTD;

    申请/专利号JP20080232175

  • 发明设计人 HARADA TOMOHIRO;SENOO SHINYA;

    申请日2008-09-10

  • 分类号H01L29/786;H01L21/28;H01L21/288;H01L29/417;G02F1/167;G02F1/17;

  • 国家 JP

  • 入库时间 2022-08-21 19:03:37

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