首页> 外国专利> CHARGED PARTICLE RADIATION DEVICE, METHOD OF MANUFACTURING RESISTANCE, AND METHOD OF MANUFACTURING LARGE-SCALE INTEGRATED CIRCUIT

CHARGED PARTICLE RADIATION DEVICE, METHOD OF MANUFACTURING RESISTANCE, AND METHOD OF MANUFACTURING LARGE-SCALE INTEGRATED CIRCUIT

机译:带电粒子辐射装置,电阻制造方法以及大型集成电路的制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a charged particle radiation device improved in resolution by reducing effect on a resistance value caused by an ambient temperature change and providing a circuit for suppressing fluctuation of a gain of an operational amplifier of a control circuit. PSOLUTION: A control means for controlling a deflection means for deflecting a charged particle radiation includes an amplification circuit. The amplification circuit includes a resistor having a structure in which a first resistance of which a resistance value change to an ambient temperature of itself has a first property, and a second resistance of which a resistance value change to an ambient temperature of itself has a property opposite to the first property are integrated. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:<解决的问题:提供一种通过减小由环境温度变化引起的对电阻值的影响来改善分辨率的带电粒子辐射装置,并提供一种用于抑制控制电路的运算放大器的增益的波动的电路。解决方案:用于控制使带电粒子辐射偏转的偏转装置的控制装置包括放大电路。放大电路包括电阻器,该电阻器具有以下结构:第一电阻的电阻值变为自身的环境温度而具有第一特性;第二电阻的电阻值变为自身的环境温度而具有第二特性。与第一个属性相反的位置被集成。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010040346A

    专利类型

  • 公开/公告日2010-02-18

    原文格式PDF

  • 申请/专利权人 HITACHI HIGH-TECHNOLOGIES CORP;

    申请/专利号JP20080202600

  • 发明设计人 ABE HIDEKI;

    申请日2008-08-06

  • 分类号H01J37/147;H01C13/02;H01C17/00;H01C7/02;H01C7/04;

  • 国家 JP

  • 入库时间 2022-08-21 19:02:58

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