METHOD OF CALCULATING AND EXPERIMENTAL ESTIMATION OF RADIATION RESISTANCE OF INTEGRATED CIRCUITS TO THE ACTION OF SEPARATE CHARGED PARTICLES BASED ON LOCAL LASER IRRADIATION

摘要

FIELD: electrical engineering.;SUBSTANCE: method relates to the field of studies of the radiation resistance of semiconductor electronics products, in particular integrated circuits, to the effects of ionizing radiation. Method for estimating the radiation resistance of integrated circuits to the effect of separate charged particles, based on local laser irradiation, includes scanning of the crystal chip by a laser beam with a diameter in the range from 30 to 100 mcm in the plane of the instrumental layer of the crystal, revealing the regions most sensitive to single radiation effects (SRE) in which the most sensitive nodes are determined and the dependence of the threshold energy of the SRE-generating laser radiation on the spot diameter is removed. Each of the dependencies obtained is approximated by a mathematical model, and the threshold energy of the laser radiation, reduced to the highly focused one, is determined from the model parameters. In the same sensing nodes, the ionization response under local irradiation in the circuit supply loop is recorded. Based on the analysis of the amplitude-time characteristics of the ionization response, the effective capacitance and resistance of the crystal of the circuit and the effective charge collection lengths for each sensitive region are determined from the calculated nomograms. Further, the coefficient of conversion of the energy of laser radiation into equivalent values of linear energy losses (LEL) for the threshold energy reduced to highly focused laser radiation is determined. Then, the IC chip is sequentially scanned with a laser beam with a fixed spot diameter value, increasing the energy of the laser radiation pulses from the SRE-generating threshold to the saturation energy; for each energy value, the effective value of the LEL and the corresponding SRE cross-section are determined, the dependence of the SRE cross-sections on the effective values of the LEL is built and the value of the saturation cross-section is determined.;EFFECT: technical result of the invention consists in carrying out the tests of integrated circuits, including those having multilayer metallization, for the radiation resistance of SRE to the action of high-energy separate charged particles without the use of calibration with the help of ion accelerators in estimating the equivalent linear energy losses.;1 cl, 7 dwg