METHOD FOR PRODUCING UNIFORMLY-DOPED SILICON CARBIDE BULK SINGLE CRYSTAL, AND UNIFORMLY-DOPED SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an SiC bulk single crystal having a uniform dopant distribution and a large-area SiC substrate to be formed therefrom.;SOLUTION: The method for producing the SiC bulk single crystal comprises the steps of: generating an SiC growth vapor phase 7 in a crystal growth area 5 of a growth crucible 3 to separate the SiC bulk single crystal 2 from the SiC growth vapor phase and grow the separated SiC bulk single crystal; supplying an SiC raw material 6 to the SiC growth vapor phase from an SiC storage area 4 in the growth crucible; and supplying the gaseous dopant, which has a dopant level in a deep spacing of at least 500 meV with respect to the SiC band edge, to the crystal growth area from a dopant storage part arranged on the outside of the growth crucible and introducing the supplied dopant into the growth crucible through many adjacent places 32, which are directed perpendicularly to the growth direction 8, in the cross section of the growth crucible so that the introduced dopant is distributed in the growth crucible.;COPYRIGHT: (C)2010,JPO&INPIT