WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a wafer for a rear-face irradiation type solid-state imaging device, its manufacturing method and the rear-face irradiation type solid-state imaging device, wherein it is possible to effectively suppress bit defects and heavy metal contamination.;SOLUTION: This wafer 10 for use by the rear-face irradiation type solid-state imaging device 100 has a plurality of pixels 70, containing a photoelectrically converting device 50 and an electric charge transfer transistor 60 on its front face 40a side and uses a rear face 20a as the light-receiving face. This wafer is an SOI wafer 10 in which a predetermined active layer 40 is formed on a support substrate 20, made of an n-type semiconductor material containing C via a chemical oxide film 30 having a film thickness of 1 nm or smaller.;COPYRIGHT: (C)2010,JPO&INPIT