Technique in order to improve the efficiency of the transistor with the transistor specific contact design

摘要

Size of contact structure (230A and 230B) and/or by making density conform locally, for example, inside the individual transistor (210,210A and 210B), or, in a wider range, it is possible to improve the entire efficiency of the semiconductor device (200) of the high performance. Because of this, it can consider in interrelationship with contact structure (230A and 230B) and local device quality. On the one hand, the former process strategy it is possible to maintain high compatibility.