While oxygen doping manner and oxygen to nitriding gallium crystal on the nitriding gallium substrate which has

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a gallium nitride single crystal into which oxygen can be doped as an n-type dopant.;SOLUTION: Oxygen is doped into a gallium nitride crystal via a non-C-plane surface by using a seed crystal having the non-C-plane surface (an upper surface), supplying material gases including a gallium material, a nitrogen material and oxygen to be doped, and growing the gallium nitride crystal with vapor deposition, while maintaining the non-C-plane surface. Otherwise, oxygen is doped into the gallium nitride crystal via a non-C-plane facet face by using a seed crystal having a C-plane surface, supplying material gases including a gallium material, a nitrogen material and oxygen to be doped, generating the non-C-plane facet face, and growing the gallium nitride crystal in the direction of the c-axis with vapor deposition, while maintaining the facet face.;COPYRIGHT: (C)2006,JPO&NCIPI