首页> 外国专利> METHOD OF MANUFACTURING COLD CATHODE ELECTRON SOURCE, AND COLD CATHODE ELECTRON SOURCE

METHOD OF MANUFACTURING COLD CATHODE ELECTRON SOURCE, AND COLD CATHODE ELECTRON SOURCE

机译:制造冷阴极电子源的方法和冷阴极电子源

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a cold cathode electron source capable of processing a certain extent of area at a time with a simple process.;SOLUTION: In the manufacturing method, a cathode electrode 2, an insulation layer 4 and a gate electrode 5 are laminated on a substrate 1, polymers A, B which are not dissolved with each other are dissolved in a solvent and coated on a surface of the gate electrode. The solvent is made to be evaporated to have polymer A deposited in fine particle shapes in the polymer B and fixed, the polymer A is removed by developer to form an etching hole 9, then a hole 6 is formed on the gate electrode by etching. Further, a hole is formed on the insulation layer through etching from the hole 6 to have a cold cathode electron source 10 by forming an emitter in the hole.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种制造冷阴极电子源的方法,该方法能够以简单的工艺一次处理一定程度的面积。解决方案:在该制造方法中,阴极电极2,绝缘层4和栅电极5层叠在基板1上,将彼此不溶解的聚合物A,B溶解在溶剂中,并涂覆在栅电极的表面上。使溶剂蒸发以使聚合物A以细颗粒形状沉积在聚合物B中并固定,通过显影剂除去聚合物A以形成蚀刻孔9,然后通过蚀刻在栅电极上形成孔6。此外,通过从孔6蚀刻而在绝缘层上形成孔,以通过在孔中形成发射极而具有冷阴极电子源10 。;版权所有:(C)2011,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号