SPIN MOSFET, AND RECONFIGURABLE LOGIC CIRCUIT USING THE SPIN MOSFET

摘要

PROBLEM TO BE SOLVED: To provide a spin MOSFET capable of suppressing increase of manufacturing cost as much as possible, and executing spin injection writing and reading.;SOLUTION: This spin MOSFET includes: a substrate 2 having a first conductivity semiconductor region 3; first and second ferromagnetic laminated films 15a, 15b which are formed on the semiconductor region separately from each other, each of which has a laminated structure with a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer laminated in this order, and in which the second ferromagnetic laminated film has a film surface area different from that of the first ferromagnetic laminated film; a gate insulation film 9 formed on the semiconductor region between the first ferromagnetic laminated film and the second ferromagnetic laminated film; and a gate 10 formed on the gate insulation film.;COPYRIGHT: (C)2010,JPO&INPIT