Method of tantalum and tantalum nitride by CVD by plasma treatment improves the adhesion and durability of the controlling membrane

摘要

PROBLEM TO BE SOLVED: To improve the adhesion and durability of the film stacks during subsequent elevated temperature processing in a method for forming modulated tantalum/tantalum nitride diffusion barrier stacks on semiconductor device substrate used in interconnect structure.;SOLUTION: Alternating layers of tantalum and tantalum nitride are deposited onto the semiconductor device substrate by chemical vapor deposition from a tantalum pentafluoride precursor vapor, with intermittent ammonia plasma treatment of the tantalum and tantalum nitride such that each tantalum layer and each tantalum nitride layer are treated at least once to thereby reduce the evolution of HF gas.;COPYRIGHT: (C)2003,JPO