Ultra-wideband distributed amplifier circuit including the active loading equipment for biasing

摘要

The invention relates to an amplifier circuit is very wide band comprising a cell distributed amplification (100) connected to a cell of polarization (200), the amplifying cell (100), including a plurality of transistors (t1) connected in parallel between a drain line and a gate line, each ending at one of its ends by a load (zin, zout), the cell of polarization (200), including at least one transistor (t2) connected between a power supply (vdd) and the drain line of the amplifying cell (100), said cell of polarization with a total impedance equal to the impedance of the load (zout) connected to the end of the drain line of the amplifying cell (100), characterized in that the grid (g2) of the transistor (t2) of the cell of polarization (200) is connected to node (201) of a divider bridge (r1r2, r1t3) so as to fix its potential vg2) (gate (g2), and in that the grid (g2) and the source (s2) of said transistor (t2) are connected together by means of at least one capacitor (c1, c2).