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The transistor which possesses the distortion channel territory which includes performance strengthening material constitution
The transistor which possesses the distortion channel territory which includes performance strengthening material constitution
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机译:具有包括性能增强材料构成的失真通道区域的晶体管
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摘要
By forming a semiconductor alloy in a silicon-based active semiconductor region prior to the gate patterning, material characteristics of the semiconductor alloy itself may also be exploited in addition to the strain-inducing effect thereof. Consequently, device performance of advanced field effect transistors may be even further enhanced compared to conventional approaches using a strained semiconductor alloy in the drain and source regions.
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