The lattice unconformity epitaxial extended territory and the distortion channel CMOS transistor structure and its production method of possessing the source and the drain territory

摘要

Topic The n type field-effect transistor (the NFET) and p type field-effect transistor (PFET) it possesses the channel territory which respectively, is arranged in the monocrystal inside layer of the 1st semiconductor, stress of 1st size is added to the channel territory of PFET, but offer the structure and its production method stress of that size not being added to the channel territory of NFET.SolutionsThis stress is added the 1st semiconductor by the layer of the 2nd semiconductor of lattice unconformity. Layer of this 2nd semiconductor, 1st is formed by the place of distance, from the channel territory of PFET on the source and the drain territory and the extended territory of PFET, layer of this 2nd semiconductor, is formed by also the place of bigger 2nd distance from the source of NFET, and, the channel territory of NFET with respect to the drain territory or is not completely formed to NFET. Selective figure Figure 1