Concatenated cavity high power semiconductor laser

摘要

(57) Abstract Topic 1 or more is desired at, the laser device of the surface luminous connected cavity semiconductor which has a bigger device efficiency than the efficiency which it is possible, at the same time can execute former VCSEL and VECSEL to create the spatial mode which a higher output level is offered. Solutions The active expansion territory which was put with 100% reflected bottom Bragg mirror and the intermediate Bragg mirror which is reflected partly is formed by the base of the baseplate, 1st (activity) of the surface luminous connected cavity high output laser device the resonance cavity is formed with this, as for reflectance ratio of the intermediate mirror, the laser vibration inside the active expansion territory does not happen to make low, only cutoff of strength of the light where the baseplate was located completely outside the 1st active resonance cavity, with the intermediate mirror and the output mirror which is reflected partly was stipulated, circulates in the expansion territory is done,2 (it is arranged inside passive) resonance kiyabitei.