首页> 外国专利> 1 atomic layer by deposition can be single-wafer processing equipment

1 atomic layer by deposition can be single-wafer processing equipment

机译:1个原子层通过沉积可以单晶片加工设备

摘要

PROBLEM TO BE SOLVED: To provide a treatment device which is capable of shortening a time required for one cycle of laminating an atomic layer, can be controlled by a computer, easily undergoes maintenance including the attachment or detachment of a component, and is easily disassembled and cleaned.;SOLUTION: The treatment device is equipped with a rotator 5a where a vent hole through which active gas penetrates is formed, a reactive gas supply chamber 102a where the rotator 5a is capable of rotating along its inner wall, a treatment chamber 101 equipped with a substrate holder 12 and an exhaust vent 13, and a reactive gas flow path Rra which connects the treatment chamber 101 to the reactive gas supply chamber 102a. When the vent hole of the rotator 5a is set coincident with the opening Ara of the reactive gas flow path Rra to the gas supply chamber 102a by controlling the rotation of the rotator 5a, the reactive gas can be introduced into the treatment chamber 101 through the reactive gas flow path Rra.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种处理装置,该处理装置能够缩短层叠原子层的一个周期所需的时间,可以由计算机控制,并且易于进行维护,包括部件的附接或拆卸,并且易于拆卸。解决方案:处理设备配备有:转子5a,在转子5a上形成有通气孔,活性气体穿过该通气孔;反应气体供给室102a,转子5a能够沿其内壁旋转;处理室101该反应器包括基板保持器12和排气口13,以及反应气体流路Rra,该反应气体流路Rra将处理室101连接到反应气体供给室102a。通过控制转子5a的旋转,将转子5a的通气孔设定成与反应气体流路Rra的通向气体供给室102a的开口Ara一致时,能够将反应气体通过反应器5a导入处理室101。反应气体流路Rra .;版权所有:(C)2005,日本特许厅

著录项

  • 公开/公告号JP4551072B2

    专利类型

  • 公开/公告日2010-09-22

    原文格式PDF

  • 申请/专利权人 渡辺 励起;株式会社アンペール;

    申请/专利号JP20030330361

  • 发明设计人 渡辺 励起;

    申请日2003-09-22

  • 分类号H01L21/205;C23C16/44;

  • 国家 JP

  • 入库时间 2022-08-21 18:59:37

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