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CVD SYSTEM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

机译:用于制造半导体器件的化学汽相淀积系统和方法

摘要

PROBLEM TO BE SOLVED: To provide a CVD system which can prevent the phenomenon that a film peeled from the outer circumferential part of a wafer sticks to a color ring as foreign matters, and to provide a method for producing a semiconductor device.;SOLUTION: Regarding the high density plasma CVD system, film deposition and etching are simultaneously or repeatedly performed, so as to form a film having high implantation properties on a wafer, and which comprises: an electrostatic chuck 2 holding a wafer 21 and having a size smaller than that of the wafer 21; and a collar ring 1b installed so as to surround the side wall of the electrostatic chuck 2. The collar ring 1b comprises a confronted part 40a confronted with the side wall of the electrostatic chuck 2 and located at the lower part of the outer circumferential part of the wafer, the confronted part 40a is formed so as to surround the side wall of the electrostatic chuck, and, to the electrostatic chuck 2 in the confronted part 40a, the outside is located at the inside than the outermost part of the outer circumferential part in the wafer.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种CVD系统,该CVD系统可以防止从晶片的外周部剥离的膜作为异物粘在色环上的现象,并提供一种半导体装置的制造方法。关于高密度等离子体CVD系统,同时或重复进行膜沉积和蚀刻,以在晶片上形成具有高注入性能的膜,并且该膜包括:静电吸盘2,其保持晶片21并且尺寸小于晶片21的直径;轴环1b包括与静电卡盘2的侧壁相对的对置部40a,该对向部40a与静电卡盘2的侧壁相对并位于其外周部的下部。在晶片上,面对部分40a形成为包围静电吸盘的侧壁,并且面对部分40a中的静电吸盘2,外部位于比外周部分的最外部靠内侧的位置。晶片中;版权:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2010001553A

    专利类型

  • 公开/公告日2010-01-07

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20080163528

  • 申请日2008-06-23

  • 分类号C23C16/505;B65G49/07;H01L21/683;C23C16/458;C23C16/44;C23C14/14;C23C14/50;C23C16/42;H01L21/31;

  • 国家 JP

  • 入库时间 2022-08-21 18:59:36

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