Being the reflected die mask blank for EUV optical exposure which possesses the reflected die mask blank for EUV

摘要

PROBLEM TO BE SOLVED: To restrict a reduction in contrast of a pattern caused by unevenness in the film thickness of an etching stepper which is formed on a multilayer film which reflects EUV beams in an EUV beams exposure reflection type mask for use in transferring a pattern in a semiconductor manufacture, or the like. SOLUTION: By using interference effects of EUV (1) beams, reflected on the surface of an etching stopper layer M1 with EUV beams which pass through the etching stopper layer M1 , are reflected by a multilayer film M2 beneath the etching stopper layer M1 , and pass again the etching stopper layer M1 , fluctuations of an EUV beams (2) reflectivity caused by unevenness in the film thickness of the etching stopper layer M1 are restricted, thereby raising the contrast of a pattern.