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ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS
ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS
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机译:离子注入用于抑制退火SiGe层中的缺陷
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摘要
A method for fabricating substantially relaxed SiGe alloy layers with a reduced planar defect density is disclosed The method of the present invention includes forming a strained Ge-containing layer on a surface of a Si-containing substrate; implanting ions at or below the Ge-containing layer/Si-containing substrate interface and heating to form a substantially relaxed SiGe alloy layer that has a reduced planar defect density. A substantially relaxed SiGe-on-insulator substrate material having a SiGe layer with a reduced planar defect density as well as heterostructures containing the same are also provided.
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