Method of growing GaN using CVD and HVPE

摘要

A thick gallium nitride (GaN) film is formed on a LiAlO₂ substrate through two stages. First, GaN nanorods are formed on the LiAlO₂ substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO₂ substrate is mended.