Structure of LiAlO₂ substrate having ZnO buffer layer

摘要

A lithium aluminum oxide (LiAlO₂) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO₂ substrate. Because the LiAlO₂ substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.