首页> 外国专利> MODELING MASK CORNER ROUNDING EFFECTS USING MULTIPLE MASK LAYERS

MODELING MASK CORNER ROUNDING EFFECTS USING MULTIPLE MASK LAYERS

机译:使用多个蒙版层对蒙版角转角效果进行建模

摘要

An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then determine a set of mask layers, wherein at least some of the mask layers correspond to the MCR components. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the set of mask layers, and the process data.
机译:一个实施例提供了用于确定改进的处理模型的系统和技术,该改进的处理模型对掩模角倒圆(MCR)效果进行建模。在操作期间,系统可以接收掩模布局和处理数据,该数据是通过将光刻工艺应用于掩模布局而生成的。该系统还可以接收未校准的过程模型,该模型可能包含一组MCR组件。接下来,系统可以识别掩模布局中的一组角。该系统然后可以确定一组掩模层,其中至少一些掩模层对应于MCR组件。接下来,系统可以通过使用掩模层的集合和过程数据来校准未校准的过程模型来确定改进的过程模型。

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