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Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
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机译:多晶硅薄膜,其制造方法以及与使用该薄膜制造的有源沟道没有方向依赖性的薄膜晶体管
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摘要
A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
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