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Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer
Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer
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机译:去除光刻胶,有机牺牲填充材料和蚀刻聚合物的化学方法
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摘要
Methods and associated structures of forming a microelectronic device are described. Those methods may include utilizing a cleaning mixture comprising a solvent such as ethylene glycol monopropyl ether, an inorganic base, an organic base, a copper corrosion inhibitor and a surfactant to clean at least one of a polymer residue, a organic sacrificial fill material and etched or un-etched photo resist from a Damascene structure of a microelectronic structure comprising a porous oxide dielectric.
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