Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areas

摘要

The invention relates to a method for producing a semiconducting structure including:controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.