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Process for controlling indium clustering in ingan leds using strain arrays
Process for controlling indium clustering in ingan leds using strain arrays
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机译:使用应变阵列控制铟铅中铟簇的方法
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摘要
Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active region can be controlled. This control of In-rich clusters can result in tighter wavelength control, which can be important for applications, such as, for example, lasers and LEDs.
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