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Apparatus for implementing SRAM cell write performance evaluation

机译:用于实现SRAM单元写性能评估的设备

摘要

A SRAM cell write performance evaluation circuit includes a SRAM core where each wordline is connected to only one bit column. A ring oscillator circuit is used to generate wordline pulses. A state machine controls operations for the SRAM cell write performance evaluation circuit including the ring oscillator circuit and the SRAM core. A control signal is applied to the state machine to select a first write operation, where the circuit simultaneously writes all the cells to a known state with wide wordlines to ensure all cells are written. Then a second write operation is selected, and all the wordlines are launched simultaneously to write the cells to the opposite state. From these write operations, a required wordline pulse width to write the cell is identified.
机译:SRAM单元写性能评估电路包括SRAM内核,其中每个字线仅连接到一个位列。环形振荡器电路用于产生字线脉冲。状态机控制用于包括环形振荡器电路和SRAM内核的SRAM单元写入性能评估电路的操作。将控制信号施加到状态机以选择第一写入操作,其中电路同时利用宽字线将所有单元写入已知状态,以确保所有单元都被写入。然后选择第二写入操作,并且同时启动所有字线以将单元写入相反的状态。从这些写入操作中,识别出写入单元所需的字线脉冲宽度。

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