首页> 外国专利> NITROGEN RADICAL GENERATOR, NITRIDING TREATMENT APPARATUS, NITROGEN RADICAL GENERATING METHOD, AND NITRIDING TREATMENT METHOD

NITROGEN RADICAL GENERATOR, NITRIDING TREATMENT APPARATUS, NITROGEN RADICAL GENERATING METHOD, AND NITRIDING TREATMENT METHOD

机译:氮自由基发生器,氮化处理设备,氮自由基生成方法和氮化处理方法

摘要

This invention provides a nitrogen radical generator which generate nitrogen radicals without generating plasma, has a simple structure, and can realize a size reduction. A nitrogen radical generator (100) comprises a polysilicon layer (103) including a nanosilicon layer (104) having one main face (104m), a silicon substrate electrode (102) provided on the other main face (103n) of the polysilicon layer (103), a surface electrode (105) provided on one main face (104m) of the nanosilicon layer (104), a first chamber(101) for housing these elements, a first power supply (109) for applying a positive voltage (V1) to the surface electrode (105), a gas inflow port (107) for allowing a nitrogen gas to flow into the first chamber (101), a nitrogen radical generation space (140) for bringing electrons released from one main face (104m) of the nanosilicon layer (104), upon the application of a positive voltage (V1), into contact with the nitrogen gas to generate nitrogen radicals, and a radical outflow port (108) for allowing the nitrogen radicals to discharge from the first chamber (101).
机译:本发明提供了一种不产生等离子体而产生氮自由基,结构简单,可以实现小型化的氮自由基产生器。氮自由基产生器(100)包括:多晶硅层(103),其包括具有一个主面(104m)的纳米硅层(104);硅衬底电极(102),该硅衬底电极(102)设置在该多晶硅层的另一主面(103n)上。 103),设置在纳米硅层(104)的一个主面(104m)上的表面电极(105),用于容纳这些元素的第一腔室(101),用于施加正电压(V1)的第一电源(109) )向表面电极(105)提供气体流入口(107),以使氮气流入第一腔室(101),并提供氮自由基产生空间(140),以使电子从一个主面(104m)释放。当施加正电压(V1)时,纳米硅层(104)的一部分与氮气接触以产生氮自由基;以及自由基流出端口(108),用于允许氮自由基从第一腔室( 101)。

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