首页>
外国专利>
IMPROVEMENT OF ORGANIC LINE WIDTH ROUGHNESS WITH H2 PLASMA TREATMENT
IMPROVEMENT OF ORGANIC LINE WIDTH ROUGHNESS WITH H2 PLASMA TREATMENT
展开▼
机译:H2等离子体处理对有机线宽粗糙度的改善
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for reducing very low frequency line width roughness (LWR) in forming etched features in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated to reduce very low frequency line width roughness of the patterned organic mask, comprising flowing a treatment gas comprising H2, wherein the treatment gas has a flow rate and H2 has a flow rate that is at least 50 % of the flow rate of the treatment gas, forming a plasma from the treatment gas, and stopping the flow of the treatment gas. The etch layer is etched through the treated patterned organic mask with the reduced very low LWR.
展开▼