IMPROVEMENT OF ORGANIC LINE WIDTH ROUGHNESS WITH H2 PLASMA TREATMENT

摘要

In forming the etched feature in an etch layer below a patterned organic mask placement method is provided for reducing the line width infrasonic roughness (LWR). Patterning the organic mask is processed to reduce the infrasonic line width roughness of the patterned organic mask, the process comprising the steps of: flowing a process gas containing H _2, the process gas has a flow rate, H ₂ is a flow of process gas having at least 50% of the rate, and a step, forming a plasma from the process gas, and the processing step to stop the flow of gas to flow to the process gas. The second has a low frequency LWR reduced, the etching layer is etched through the patterned organic-treated mask. ;