首页> 外国专利> USE OF HIGH-PURITY POLYCRYSTALLINE SILICON ROD AS FEED ROD IN MONOCRYSTALLINE SILICON ZONE MELTING PROCESS AND ITS MANUFACTURING METHOD

USE OF HIGH-PURITY POLYCRYSTALLINE SILICON ROD AS FEED ROD IN MONOCRYSTALLINE SILICON ZONE MELTING PROCESS AND ITS MANUFACTURING METHOD

机译:高纯多晶硅棒在单晶硅带熔化过程中作为进料棒的使用及其制造方法

摘要

The present invention discloses a use of high-purity polycrystalline silicon rod as feed rod in monocrystalline silicon zone melting process and its manufacturing method. The high-purity silicon rod is pressed into silicon rod with a diameter of 20mm-30mm by isostatic pressing method using silicon powder with purity of 99.9999%-99.9999999999%. Silicon powder used for the feedstock silicon rod has a diameter of 0.1mm-100mm.The density of the feedstock rod is 1.60-2.29g/cm3, anti-pressure parameter thereof is 0.1-50MPa and the purity thereof is 99.9999%-99.9999999999%. The feedstock rod has uniform density, which manifests in that an amplitude of density difference is 0-18% between any two points on any cross section of the silicon bulk. The high-purity polycrystalline silicon rod is of excellent anti-pressure performance and can be directly used as monocrystallinel silicon feedstock rod in zone melting process.
机译:本发明公开了一种高纯度多晶硅棒作为单晶硅区熔化工艺中的进料棒的用途及其制造方法。采用纯度为99.9999%-99.9999999999%的硅粉,通过等静压法将高纯度硅棒压制成直径为20mm-30mm的硅棒。用于原料硅棒的硅粉直径为0.1mm-100mm。原料棒的密度为1.60-2.29g / cm3,抗压参数为0.1-50MPa,纯度为99.9999%-99.9999999999% 。原料棒具有均匀的密度,这表现为在硅块的任何横截面上的任何两个点之间的密度差的幅度为0-18%。高纯度多晶硅棒具有良好的抗压性能,可在区域熔化过程中直接用作单晶硅原料棒。

著录项

  • 公开/公告号WO2010040283A1

    专利类型

  • 公开/公告日2010-04-15

    原文格式PDF

  • 申请/专利号WO2009CN01229

  • 发明设计人

    申请日2009-11-05

  • 分类号C30B13/00;C30B28/02;C30B29/06;C01B33/037;

  • 国家 WO

  • 入库时间 2022-08-21 18:38:47

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