METHOD FOR PRODUCTION OF GaxIn1-xN (0 x 1) CRYSTAL, GaxIn1-xN (0 x 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT

摘要

It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100°C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100°C.;Disclosed herein is a method for producing a GaxIn1-xN (0≤x≤1) crystal (12) by growing GaxIn1-xN (0≤x≤1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≤x≤1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.