High power semiconductor package with dual-sided heat sinking

摘要

An assembly (20) includes a semiconductor die (22) disposed between an upper substrate (28) and a lower substrate (36). A circuit board (56) that defines a through hole (64) is spaced axially below the upper substrate (28) to define a gap (58) between the upper substrate (28) and the circuit board (56). An upper heat sink (76) is thermally connected to the upper substrate (28) by an upper thermal interface material (80) to transfer heat in a first dissipation path to the upper heat sink (76). A lower heat sink (82) is thermally connected to the lower substrate (36) by a lower thermal interface material (86) to transfer heat in a second dissipation path to the lower heat sink (82). A plurality of first interconnectors (88) are disposed in the gap (58) to solder the upper substrate (28) to the circuit board (56). The assembly (20) is distinguished by a plurality of second interconnectors (92) that are disposed between the upper substrate (28) and the lower substrate (36) to position the lower substrate (36) in the through hole (64) of the circuit board (56).