GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD

摘要

Affords Ga_xIn_1-xN substrates onto which high-quality epitaxial films can be stably grown, and cleaning methods for manufacturing the Ga_xIn_1-xN substrates.;GaxIn1-xN substrate in which the number of particles of not less than 0.2 µm particle size present on the GaxIn1-xN substrate surface is 20 or fewer, given that the GaxIn1-xN substrate diameter is 2 inches. Furthermore, a GaxIn1-xN substrate in which in a photoelectron spectrum along the GaxIn1-xN substrate surface by X-ray photoelectron spectroscopy at a take-off angle of 10°, the ratio between the peak areas of the C1s electron and N1s electron (C 1s electron peak area/N 1s electron peak area) is 3 or less.