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Substrate Cleaning Methods for Fabricating OLEDs and Its Effect on Current Leakage Defect Formation

机译:制造OLED的基板清洗方法及其对电流泄漏缺陷形成的影响

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摘要

Various methods for cleaning the large glass substrates (300 times 400 mm) used in organic light-emitting diode (OLED) fabrication processes were investigated. Horizontal roller-bed cleaning methods using a shower-rinse with megasonic (MS)-irradiation, or brush-scrubbing, were investigated for use with anode sputtering processes. Substrates were contaminated with particulate contaminants (0.3-0.5 particles/cm2) generated from anode sputtering targets. Large particles ( ges 5 mum) were easily removed with the MS irradiation (efficiency ges 95% ). Small particles (<3 mum) were harder to remove. The brush-scrubbing cleaning removed them with 80 - 90% efficiency, while the MS-irradiation cleaning had an efficiency of 60%-70%. spin-rinse-dry cleaning methods using ozonized or electrolyzed cathode water were investigated for use with pre-organic deposition processes. Glass substrates were intentionally contaminated by exposing them to a clean room atmosphere for either 24 or 100 hours. The number of particles was reduced from around 0.4 to 0.03/cm2 and from around 1.7 to 0.08/cm2 by the MS-irradiation cleaning using de-ionized water alone, respectively. The effect of the ozonized water treatment was evident for the longer exposure substrates: it reduced the number of particles to 0.03. The electrolyzed-cathode water cleaning was successful in removing submicrometer size particles. We also investigated the effect of particulate contaminants on the current leakage defect formation.
机译:研究了用于清洁有机发光二极管(OLED)制造过程中使用的大型玻璃基板(300倍于400毫米)的各种方法。研究了使用兆声波(MS)辐射淋洗或刷洗的水平辊床清洗方法,用于阳极溅射工艺。基材被阳极溅射靶产生的颗粒污染物(0.3-0.5颗粒/ cm2)污染。用MS照射很容易去除大颗粒(ges 5毫米)(效率ges 95%)。小颗粒(<3毫米)更难去除。刷子擦洗的效率为80-90%,而MS辐照清洗的效率为60%-70%。研究了使用臭氧化或电解阴极水的旋转漂洗-干洗方法,以用于有机前沉积工艺。通过将玻璃基板暴露在洁净室气氛中24或100小时,有意污染了玻璃基板。通过仅使用去离子水的MS辐照清洗,颗粒数量分别从约0.4减少到0.03 / cm2,从约1.7减少到0.08 / cm2。臭氧化水处理的效果对于暴露时间较长的底物很明显:将颗粒数减少至0.03。电解阴极水清洗成功地去除了亚微米尺寸的颗粒。我们还研究了颗粒污染物对电流泄漏缺陷形成的影响。

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