Cd(Zn)Te based Radiation converter material and its use particularly for x-ray computer tomography, radiation converters and radiation detectors and x-ray computer tomographs

摘要

A cadmium zinc telluride based radiation converter material comprises a binary or tertiary semiconducting material on basis of elements such as cadmium, tellurium or cadmium, zinc and tellurium. The semiconducting material is also endowed with a dopant selected from osmium, ruthenium, iridium, rhenium, rhodium, palladium, iron, nickel or cobalt, another dopant selected from oxygen, sulfur or selenium, and a third dopant selected from group III elements of the periodic table. An independent claim is included for a method for producing a radiation converter, which involves using radiation converter material made through chemical vapor deposition, metalorganic vapour phase epitaxy, metalorganic chemical vapour deposition, atomic layer epitaxy, molecular beam epitaxy, travelling heater method, traveling-solvent method, Bridgman method, high-pressure Bridgman or vapor phase epitaxy process.