ELECTRICALLY CONDUCTIVE GAAS CRYSTAL, ELECTRICALLY CONDUCTIVE GAAS CRYSTAL SUBSTRATE, AND PROCESSES FOR PRODUCING THOSE MATERIALS

摘要

Disclosed is an electrically conductive GaAs crystal characterized by having an Si atom concentration of more than 1 × 1017 cm-3 and containing precipitates each having a size of 30 nm or more at a density of 400 precipitates/cm-2 or less. It is preferred that the electrically conductive GaAs crystal have a dislocation density of 2 × 102 cm-2 or less or 1 × 103 cm-2 or more.