ELECTRICALLY CONDUCTIVE GAAS CRYSTAL, ELECTRICALLY CONDUCTIVE GAAS CRYSTAL SUBSTRATE, AND PROCESSES FOR PRODUCING THOSE MATERIALS

摘要

An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017cm-3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm-2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10-2 cm2 or at least 1×10-3 cm2.