首页> 外国专利> Semiconductor integrated circuit comprising mutli-threshold CMOS (MTCMOS) and non-MTCMOS circuit cells in the same circuit block

Semiconductor integrated circuit comprising mutli-threshold CMOS (MTCMOS) and non-MTCMOS circuit cells in the same circuit block

机译:半导体集成电路,在同一电路块中包含多阈值CMOS(MTCMOS)和非MTCMOS电路单元

摘要

Disclosed herein is a semiconductor integrated circuit including: a cell layout region (A1) including circuit cells (10) subject to power control the supply and interruption of power to which is controlled by a power switch (20), and always-on circuit cell groups (50) which are always powered after the activation; a main line (PL1) laid out in the cell layout region (A1) and applied with a source (VDD) or reference (VSS) voltage; and first and second branch lines (BL2) which branch from the main line (PL1) in the cell layout region (A1).
机译:本文公开了一种半导体集成电路,其包括:单元布图区域(A1),该单元布图区域(A1)包括受功率控制的电路单元(10),由电源开关(20)控制向其供电和供电,以及常开电路单元激活后始终通电的组(50);布置在单元布局区域(A1)中并施加有源(VDD)或基准(VSS)电压的主线(PL1);第一和第二分支线(BL2)从单元布置区域(A1)中的主线(PL1)分支。

著录项

  • 公开/公告号EP2133917A2

    专利类型

  • 公开/公告日2009-12-16

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号EP20090162504

  • 发明设计人 MOTOMURA TETSUO;

    申请日2009-06-11

  • 分类号H01L27/02;H01L27/118;

  • 国家 EP

  • 入库时间 2022-08-21 18:36:46

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