首页> 外国专利> FORMATION OF HIGH QUALITY BACK CONTACT WITH SCREEN-PRINTED LOCAL BACK SURFACE FIELD

FORMATION OF HIGH QUALITY BACK CONTACT WITH SCREEN-PRINTED LOCAL BACK SURFACE FIELD

机译:带有屏幕印刷的局部背面表面场的高质量背面接触的形成

摘要

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.
机译:描述了具有背面电介质钝化和与局部背面电场的背面接触的薄硅太阳能电池。具体地,太阳能电池可以由厚度为50至500微米的结晶硅晶片制成。至少在硅晶片的背面上施加阻挡层和介电层,以在形成后触点时防止硅晶片变形。在介电层上形成至少一个开口。在开口中和介电层上形成提供背面电场的铝触点。可以通过丝网印刷具有1至12原子百分比的硅的铝浆,然后在750摄氏度下进行热处理来施加铝触点。

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