Chemical Mechanical Polishing Composition for polishing substrates containing a low-k dielectric material and Methods Relating Thereto

摘要

A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt% abrasive having an average particle size of ≤ 100 nm; 0.001 to 5 wt% quaternary compound; a material having a formula (I):wherein R is selected from C₂-C₂₀ alkyl, C₂-C₂₀ aryl, C₂-C₂₀ aralkyl and C₂-C₂₀ alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x + y ≥ 1; and, wherein the chemical mechanical polishing composition has a pH ≤ 5.