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Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor

机译:多晶硅的制造方法,薄膜晶体管,该薄膜晶体管的制造方法以及具有该薄膜晶体管的有机发光二极管显示装置

摘要

A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLEO) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.
机译:薄膜晶体管,其制造方法以及包括该薄膜晶体管的有机发光二极管(OLEO)显示装置,该薄膜晶体管包括:基板;在基板上形成的缓冲层;第一半导体层,设置在缓冲层上;第二半导体层,设置在第一半导体层上,第二半导体层大于第一半导体层;与第一半导体层和第二半导体层绝缘的栅电极;栅极绝缘层,用于使栅电极与第一半导体层和第二半导体层绝缘;源极和漏极与栅电极绝缘并连接到第二半导体层。绝缘层设置在源电极和漏电极上,有机发光二极管连接到源电极和漏电极之一。

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