PHASE-CHANGE MEMORY DEVICE AND A METHOD FOR FABRICATING THE SAME, CAPABLE OF PROTECTING THE EXPOSURE OF A PHASE CHANGE FILM PATTERN FROM A PHYSICAL IMPACT BY HARDENING THE FIRST INSULATING FILM

摘要

PURPOSE: A phase-change memory device and a method for fabricating the same are provided to prevent an air gap a domain in which a phase change film pattern is tightly arranged by forming a first insulating film with excellent gap fill.;CONSTITUTION: In a phase-change memory device and a method for fabricating the same, a phase change layer(110) including a phase change material film is formed on a substrate(100). An anti oxidation layer(140) is formed along the surface of the phase change film pattern on the substrate. An inter-layer insulating film(165) is formed on the anti oxidation layer between phase change film patterns. The inter-layer insulating film comprises a first insulating layer(150) and a second insulating layer(160). The first insulating layer has a phase higher than phase change material film, and the first insulating layer has a gap fill superior to the second insulating layer.;COPYRIGHT KIPO 2010