首页> 外国专利> POSITIVE RESIST COMPOSITION SUITABLE FOR IMMERSION PROJECTION EXPOSURE APPARATUS USING FAR ULTRAVIOLET RAYS OF 300 NM OR LESS AS LIGHT SOURCE, AND PATTERNING METHOD USING IT

POSITIVE RESIST COMPOSITION SUITABLE FOR IMMERSION PROJECTION EXPOSURE APPARATUS USING FAR ULTRAVIOLET RAYS OF 300 NM OR LESS AS LIGHT SOURCE, AND PATTERNING METHOD USING IT

机译:适用于使用300 NM或更少的远紫外线作为光源的浸没曝光设备的正性抗蚀剂组合物以及使用该组合物的图案化方法

摘要

PURPOSE: A positive resist composition, and a method for forming a pattern by using the composition are provided to improve the performance to the development by general exposure, and to prevent the deterioration of DOF and profile when used to immersion exposure.;CONSTITUTION: A positive resist composition comprises resin which has a monoalicyclic or polyalicyclic hydrocarbon structure and whose solubility in an alkali developer increases by the action of an acid; a compound which generates an acid by the irradiation of active rays or radioactive rays; and a surfactant which is represented by the formulas 2~8 and contains 30~60 mass% of fluorine atoms, wherein Rf1 and Rf2 are independently a fluoroalkyl group; m is an integer of 2-50; and X1 to X4 are independently H, an alkyl group or a fluoroalkyl group.;COPYRIGHT KIPO 2010
机译:目的:提供一种正性抗蚀剂组合物,以及使用该组合物形成图案的方法,以改善普通曝光对显影的性能,并防止在用于浸没式曝光时DOF和轮廓的劣化。正性抗蚀剂组合物包含具有单脂环族或聚脂环族烃结构且通过酸的作用在碱性显影液中的溶解度增加的树脂。通过辐照活性射线或放射性射线产生酸的化合物;式2〜8所示的表面活性剂含有30〜60质量%的氟原子,Rf1,Rf2分别为氟烷基。 m是2-50的整数; X1至X4独立地为H,烷基或氟代烷基。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20090132576A

    专利类型

  • 公开/公告日2009-12-30

    原文格式PDF

  • 申请/专利权人 FUJIFILM CORPORATION;

    申请/专利号KR20090110354

  • 发明设计人 KANDA HIROMI;NISHIYAMA HUMIYUKI;

    申请日2009-11-16

  • 分类号G03F7/039;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:49

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