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POSITIVE RESIST COMPOSITION SUITABLE FOR IMMERSION PROJECTION EXPOSURE APPARATUS USING FAR ULTRAVIOLET RAYS OF 300 NM OR LESS AS LIGHT SOURCE, AND PATTERNING METHOD USING IT
POSITIVE RESIST COMPOSITION SUITABLE FOR IMMERSION PROJECTION EXPOSURE APPARATUS USING FAR ULTRAVIOLET RAYS OF 300 NM OR LESS AS LIGHT SOURCE, AND PATTERNING METHOD USING IT
PURPOSE: A positive resist composition, and a method for forming a pattern by using the composition are provided to improve the performance to the development by general exposure, and to prevent the deterioration of DOF and profile when used to immersion exposure.;CONSTITUTION: A positive resist composition comprises resin which has a monoalicyclic or polyalicyclic hydrocarbon structure and whose solubility in an alkali developer increases by the action of an acid; a compound which generates an acid by the irradiation of active rays or radioactive rays; and a surfactant which is represented by the formulas 2~8 and contains 30~60 mass% of fluorine atoms, wherein Rf1 and Rf2 are independently a fluoroalkyl group; m is an integer of 2-50; and X1 to X4 are independently H, an alkyl group or a fluoroalkyl group.;COPYRIGHT KIPO 2010
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