High density NAND flash memory cell devices and cell string

摘要

The present invention relates to a high density flash memory cell device and the cell string. The flash memory cell string is provided with a switching element which is connected to the end of the cell element and the plurality of cell elements. The cell element is a transmissive insulating film, the nano-dots are sequentially stacked on a semiconductor substrate, a semiconductor substrate (dot) having a charge storage node, a control insulation layer and a control electrode consisting of, and that the source / drain regions are not formed. It characterized by a silicon substrate structure for easy formation of the inversion layer in place of the source / drain feature in the flash memory cell string. The switching element is not provided with a source or drain region on the side associated with the cell element, the side that is not associated with the cell elements characterized in that it comprises a source or drain region. Improve miniaturization characteristics and performance of the cell elements in the NAND flash memory according to the present invention, print is generated from a control electrode and a charge storage node Jing (fringing) between up through the field of organic an inversion layer of the channel cell and the cell or the cell strings to be coupled with the electrical. ; NAND Flash, the source / drain, non-overlap, memory, high-density, fringing field, nano device, a charge storage node, the nano dot