PERPENDICULAR MAGNETIC NON-VOLATILE MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF TO PREVENT THE DEGRADATION OF THE MAGNETIC TUNNEL JUNCTION DUE TO HIGH TEMPERATURE HEAT TREATMENT

摘要

PURPOSE: A perpendicular magnetic non-volatile memory device and a manufacturing method thereof are provided to manufacture MRAM with high integrity by applying an STT-MRAM cell to the memory.;CONSTITUTION: A perpendicular magnetic non-volatile memory device comprises gates(23), a source line, an MTJ(Magnetic Tunnel Junction), and a bit line. The gates are formed on a semiconductor substrate. The source line is connected to a source/drain region shared by adjacent gates. The MTJs are connected to the non-sharable source/drain region of the gates and one-to-one. The bit line is connected to MTJs.;COPYRIGHT KIPO 2010