首页> 外国专利> IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD, IN-CHAMBER MEMBER, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME

IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD, IN-CHAMBER MEMBER, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME

机译:舱内温度控制方法,舱内成员,基板安装台和包括相同组件的等离子体处理装置

摘要

PURPOSE: An in-chamber member temperature control method, an in-chamber member, a substrate mounting table, and a plasma processing apparatus including the same are provided to optimize the temperature of all kinds of members to be used for plasma processing. CONSTITUTION: An in-chamber member temperature control method for a plasma processing apparatus comprises the steps of: preparing power supply units a member in a chamber(1), measuring the resistance or specific resistance of the in-chamber member while supplying power and heating, and controlling the power based on the temperature of the in-chamber member predicted from the resistance or specific resistance.
机译:目的:提供一种室内部件温度控制方法,室内部件,基板安装台以及包括该温度控制方法的等离子体处理设备,以优化用于等离子体处理的各种部件的温度。组成:一种用于等离子体处理装置的腔室内构件的温度控制方法,包括以下步骤:在腔室(1)中准备电源单元和一个构件;在提供电源和加热的同时测量腔室内构件的电阻或比电阻,并根据电阻或比电阻预测的室内部件的温度控制功率。

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