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IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD, IN-CHAMBER MEMBER, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME
IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD, IN-CHAMBER MEMBER, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME
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机译:舱内温度控制方法,舱内成员,基板安装台和包括相同组件的等离子体处理装置
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摘要
PURPOSE: An in-chamber member temperature control method, an in-chamber member, a substrate mounting table, and a plasma processing apparatus including the same are provided to optimize the temperature of all kinds of members to be used for plasma processing. CONSTITUTION: An in-chamber member temperature control method for a plasma processing apparatus comprises the steps of: preparing power supply units a member in a chamber(1), measuring the resistance or specific resistance of the in-chamber member while supplying power and heating, and controlling the power based on the temperature of the in-chamber member predicted from the resistance or specific resistance.
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